TY  - JOUR
AU  - Tran, Duy
AU  - Pham, Thuy
AU  - Wolfrum, Bernhard
AU  - Offenhäusser, Andreas
AU  - Thierry, Benjamin
TI  - CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization
JO  - Materials
VL  - 11
IS  - 5
SN  - 1996-1944
CY  - Basel
PB  - MDPI
M1  - FZJ-2019-02451
SP  - 785 -
PY  - 2018
AB  - Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. A key requirement toward the fulfilment of SiNW FETs’ promises in the bioanalytical field is their efficient integration within functional devices. Aiming to provide a comprehensive roadmap for the development of SiNW FET based sensing platforms, we critically review and discuss the key design and fabrication aspects relevant to their development and integration within complementary metal-oxide-semiconductor (CMOS) technology
LB  - PUB:(DE-HGF)16
C6  - pmid:29751688
UR  - <Go to ISI:>//WOS:000434711700135
DO  - DOI:10.3390/ma11050785
UR  - https://juser.fz-juelich.de/record/862095
ER  -