Journal Article

FZJ-2019-02451

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization

Tran, D. ; Pham, T. ; Wolfrum, B.FZJ* ; Offenhäusser, A.FZJ* ; Thierry, B. (Corresponding author)

2018
MDPI Basel

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Please use a persistent id in citations: http://hdl.handle.net/2128/22028  doi:10.3390/ma11050785

Abstract: Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. A key requirement toward the fulfilment of SiNW FETs’ promises in the bioanalytical field is their efficient integration within functional devices. Aiming to provide a comprehensive roadmap for the development of SiNW FET based sensing platforms, we critically review and discuss the key design and fabrication aspects relevant to their development and integration within complementary metal-oxide-semiconductor (CMOS) technology

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Contributing Institute(s):

1. Bioelektronik (ICS-8)

Research Program(s):

1. 523 - Controlling Configuration-Based Phenomena (POF3-523) (POF3-523)

Appears in the scientific report 2019

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Database coverage:
; ; ; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; DOAJ Seal ; Ebsco Academic Search ; IF < 5 ; JCR ; PubMed Central ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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