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000862159 1001_ $$0P:(DE-Juel1)171441$$aWang, Yuhan$$b0$$ufzj
000862159 1112_ $$aDPG Frühjahrstagung$$cRegensburg$$d2019-03-31 - 2019-04-06$$wGermany
000862159 245__ $$aDislocation bending in GaN/step-graded (Al,Ga)N/AIN buffer layers on Si(111) investigated by STM and STEM
000862159 260__ $$c2019
000862159 3367_ $$033$$2EndNote$$aConference Paper
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000862159 536__ $$0G:(DE-HGF)POF3-141$$a141 - Controlling Electron Charge-Based Phenomena (POF3-141)$$cPOF3-141$$fPOF III$$x0
000862159 7001_ $$0P:(DE-Juel1)165179$$aZhang, Lei$$b1$$ufzj
000862159 7001_ $$0P:(DE-Juel1)145975$$aPortz, Verena$$b2
000862159 7001_ $$0P:(DE-Juel1)143949$$aSchnedler, Michael$$b3$$ufzj
000862159 7001_ $$0P:(DE-Juel1)145711$$aJin, Lei$$b4$$ufzj
000862159 7001_ $$0P:(DE-HGF)0$$aHao, Xiaopeng$$b5
000862159 7001_ $$0P:(DE-HGF)0$$aEisele, Holger$$b6
000862159 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b7$$ufzj
000862159 7001_ $$0P:(DE-Juel1)130627$$aEbert, Philipp$$b8$$ufzj
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