Hauptseite > Publikationsdatenbank > Dislocation bending in GaN/step-graded (Al,Ga)N/AIN buffer layers on Si(111) investigated by STM and STEM > print

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037 _ _ |a FZJ-2019-02513
041 _ _ |a English
100 1 _ |a Wang, Yuhan
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111 2 _ |a DPG Frühjahrstagung
|c Regensburg
|d 2019-03-31 - 2019-04-06
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245 _ _ |a Dislocation bending in GaN/step-graded (Al,Ga)N/AIN buffer layers on Si(111) investigated by STM and STEM
260 _ _ |c 2019
336 7 _ |a Conference Paper
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700 1 _ |a Zhang, Lei
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700 1 _ |a Portz, Verena
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700 1 _ |a Schnedler, Michael
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700 1 _ |a Jin, Lei
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700 1 _ |a Hao, Xiaopeng
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700 1 _ |a Eisele, Holger
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700 1 _ |a Dunin-Borkowski, Rafal
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700 1 _ |a Ebert, Philipp
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