%0 Journal Article
%A Franz, Martin
%A Appelfeller, Stephan
%A Eisele, Holger
%A Ebert, Philipp
%A Dähne, Mario
%T Valence band structure and effective masses of GaN(10¯10)
%J Physical review / B
%V 99
%N 19
%@ 2469-9950
%C Woodbury, NY
%I Inst.
%M FZJ-2019-03032
%P 195306
%D 2019
%X The electronic structure of the clean and stoichiometric GaN(10¯10) cleavage surface is investigated in a comprehensive angle-resolved photoelectron spectroscopy study. A clear distinction between surface and bulk related features allows us to measure the dispersions of the occupied surface state band from the N dangling bonds as well as of the uppermost bulk valence bands and to extract the effective hole masses directly with high precision. This is performed along various directions in k∥ space providing a detailed picture of the electronic band dispersion. The obtained results show three separated bulk bands without indications of a crossing of these bands as commonly predicted in theoretical works. Moreover, from the observed Fermi-level pinning we determine the position of the minimum of the empty Ga-derived surface state band, which is found deep within the fundamental band gap at ∼2.3 eV above the valence band maximum.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000468209300003
%R 10.1103/PhysRevB.99.195306
%U https://juser.fz-juelich.de/record/862831