Journal Article

FZJ-2019-03032

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Valence band structure and effective masses of GaN(10¯10)

Franz, M. (Corresponding author) ; Appelfeller, S. ; Eisele, H. ; Ebert, P.FZJ* ; Dähne, M.

2019
Inst. Woodbury, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/22203  doi:10.1103/PhysRevB.99.195306

Abstract: The electronic structure of the clean and stoichiometric GaN(10¯10) cleavage surface is investigated in a comprehensive angle-resolved photoelectron spectroscopy study. A clear distinction between surface and bulk related features allows us to measure the dispersions of the occupied surface state band from the N dangling bonds as well as of the uppermost bulk valence bands and to extract the effective hole masses directly with high precision. This is performed along various directions in k∥ space providing a detailed picture of the electronic band dispersion. The obtained results show three separated bulk bands without indications of a crossing of these bands as commonly predicted in theoretical works. Moreover, from the observed Fermi-level pinning we determine the position of the minimum of the empty Ga-derived surface state band, which is found deep within the fundamental band gap at ∼2.3 eV above the valence band maximum.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2019

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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