TY  - JOUR
AU  - Franz, Martin
AU  - Appelfeller, Stephan
AU  - Eisele, Holger
AU  - Ebert, Philipp
AU  - Dähne, Mario
TI  - Valence band structure and effective masses of GaN(10¯10)
JO  - Physical review / B
VL  - 99
IS  - 19
SN  - 2469-9950
CY  - Woodbury, NY
PB  - Inst.
M1  - FZJ-2019-03032
SP  - 195306
PY  - 2019
AB  - The electronic structure of the clean and stoichiometric GaN(10¯10) cleavage surface is investigated in a comprehensive angle-resolved photoelectron spectroscopy study. A clear distinction between surface and bulk related features allows us to measure the dispersions of the occupied surface state band from the N dangling bonds as well as of the uppermost bulk valence bands and to extract the effective hole masses directly with high precision. This is performed along various directions in k∥ space providing a detailed picture of the electronic band dispersion. The obtained results show three separated bulk bands without indications of a crossing of these bands as commonly predicted in theoretical works. Moreover, from the observed Fermi-level pinning we determine the position of the minimum of the empty Ga-derived surface state band, which is found deep within the fundamental band gap at ∼2.3 eV above the valence band maximum.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000468209300003
DO  - DOI:10.1103/PhysRevB.99.195306
UR  - https://juser.fz-juelich.de/record/862831
ER  -