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@ARTICLE{Franz:862831,
author = {Franz, Martin and Appelfeller, Stephan and Eisele, Holger
and Ebert, Philipp and Dähne, Mario},
title = {{V}alence band structure and effective masses of
{G}a{N}(10¯10)},
journal = {Physical review / B},
volume = {99},
number = {19},
issn = {2469-9950},
address = {Woodbury, NY},
publisher = {Inst.},
reportid = {FZJ-2019-03032},
pages = {195306},
year = {2019},
abstract = {The electronic structure of the clean and stoichiometric
GaN(10¯10) cleavage surface is investigated in a
comprehensive angle-resolved photoelectron spectroscopy
study. A clear distinction between surface and bulk related
features allows us to measure the dispersions of the
occupied surface state band from the N dangling bonds as
well as of the uppermost bulk valence bands and to extract
the effective hole masses directly with high precision. This
is performed along various directions in k∥ space
providing a detailed picture of the electronic band
dispersion. The obtained results show three separated bulk
bands without indications of a crossing of these bands as
commonly predicted in theoretical works. Moreover, from the
observed Fermi-level pinning we determine the position of
the minimum of the empty Ga-derived surface state band,
which is found deep within the fundamental band gap at
∼2.3 eV above the valence band maximum.},
cin = {PGI-5},
ddc = {530},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {141 - Controlling Electron Charge-Based Phenomena
(POF3-141)},
pid = {G:(DE-HGF)POF3-141},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000468209300003},
doi = {10.1103/PhysRevB.99.195306},
url = {https://juser.fz-juelich.de/record/862831},
}