001     862831
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024 7 _ |a 10.1103/PhysRevB.99.195306
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024 7 _ |a 1050-2947
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024 7 _ |a 1094-1622
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024 7 _ |a 1098-0121
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024 7 _ |a 1538-4489
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024 7 _ |a 1550-235X
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024 7 _ |a 2469-9950
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024 7 _ |a 2469-9969
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037 _ _ |a FZJ-2019-03032
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100 1 _ |a Franz, Martin
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245 _ _ |a Valence band structure and effective masses of GaN(10¯10)
260 _ _ |a Woodbury, NY
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520 _ _ |a The electronic structure of the clean and stoichiometric GaN(10¯10) cleavage surface is investigated in a comprehensive angle-resolved photoelectron spectroscopy study. A clear distinction between surface and bulk related features allows us to measure the dispersions of the occupied surface state band from the N dangling bonds as well as of the uppermost bulk valence bands and to extract the effective hole masses directly with high precision. This is performed along various directions in k∥ space providing a detailed picture of the electronic band dispersion. The obtained results show three separated bulk bands without indications of a crossing of these bands as commonly predicted in theoretical works. Moreover, from the observed Fermi-level pinning we determine the position of the minimum of the empty Ga-derived surface state band, which is found deep within the fundamental band gap at ∼2.3 eV above the valence band maximum.
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700 1 _ |a Appelfeller, Stephan
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700 1 _ |a Eisele, Holger
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700 1 _ |a Ebert, Philipp
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700 1 _ |a Dähne, Mario
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773 _ _ |a 10.1103/PhysRevB.99.195306
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