000862905 001__ 862905
000862905 005__ 20210130001713.0
000862905 0247_ $$2doi$$a10.1016/j.mee.2019.110992
000862905 0247_ $$2ISSN$$a0167-9317
000862905 0247_ $$2ISSN$$a1873-5568
000862905 0247_ $$2WOS$$aWOS:000480665600006
000862905 037__ $$aFZJ-2019-03079
000862905 082__ $$a620
000862905 1001_ $$0P:(DE-HGF)0$$aAfanas'ev, V. V.$$b0$$eCorresponding author
000862905 245__ $$aDetermination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents
000862905 260__ $$a[S.l.] @$$bElsevier$$c2019
000862905 3367_ $$2DRIVER$$aarticle
000862905 3367_ $$2DataCite$$aOutput Types/Journal article
000862905 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1558941378_13617
000862905 3367_ $$2BibTeX$$aARTICLE
000862905 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000862905 3367_ $$00$$2EndNote$$aJournal Article
000862905 520__ $$aSpectral measurements of illumination-induced displacement currents related to trapping of charge carriers optically excited in semiconductor electrodes are shown to deliver information regarding energy onsets of electron transitions at the interface. Presented examples include determination of the conduction band offset at the GaN/Al2O3 interface and determination of charge carrier excitation spectra of two-dimensional (2D) semiconductors MoS2 and WS2 at the interface with insulating SiO2.
000862905 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000862905 588__ $$aDataset connected to CrossRef
000862905 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b1
000862905 7001_ $$0P:(DE-HGF)0$$aNeft, A.$$b2
000862905 7001_ $$0P:(DE-HGF)0$$aDelie, G.$$b3
000862905 7001_ $$0P:(DE-HGF)0$$aShlyakhov, I.$$b4
000862905 7001_ $$0P:(DE-HGF)0$$aTrepalin, V.$$b5
000862905 7001_ $$0P:(DE-HGF)0$$aHoussa, M.$$b6
000862905 7001_ $$0P:(DE-HGF)0$$aStesmans, A.$$b7
000862905 773__ $$0PERI:(DE-600)1497065-x$$a10.1016/j.mee.2019.110992$$gVol. 215, p. 110992 -$$p110992 -$$tMicroelectronic engineering$$v215$$x0167-9317$$y2019
000862905 8564_ $$uhttps://juser.fz-juelich.de/record/862905/files/Elsevier-Manuscript.pdf$$yRestricted
000862905 8564_ $$uhttps://juser.fz-juelich.de/record/862905/files/Elsevier-Manuscript.pdf?subformat=pdfa$$xpdfa$$yRestricted
000862905 909CO $$ooai:juser.fz-juelich.de:862905$$pVDB
000862905 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128631$$aForschungszentrum Jülich$$b1$$kFZJ
000862905 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b2$$kFZJ
000862905 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000862905 9141_ $$y2019
000862905 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000862905 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000862905 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bMICROELECTRON ENG : 2017
000862905 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000862905 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000862905 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000862905 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List
000862905 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000862905 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000862905 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000862905 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000862905 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000862905 920__ $$lyes
000862905 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000862905 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000862905 980__ $$ajournal
000862905 980__ $$aVDB
000862905 980__ $$aI:(DE-Juel1)PGI-9-20110106
000862905 980__ $$aI:(DE-82)080009_20140620
000862905 980__ $$aUNRESTRICTED