Journal Article

FZJ-2019-03079

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents

Afanas'ev, V. V. (Corresponding author) ; Schubert, J.FZJ* ; Neft, A.FZJ* ; Delie, G. ; Shlyakhov, I. ; Trepalin, V. ; Houssa, M. ; Stesmans, A.

2019
Elsevier [S.l.] @

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Please use a persistent id in citations: doi:10.1016/j.mee.2019.110992

Abstract: Spectral measurements of illumination-induced displacement currents related to trapping of charge carriers optically excited in semiconductor electrodes are shown to deliver information regarding energy onsets of electron transitions at the interface. Presented examples include determination of the conduction band offset at the GaN/Al2O3 interface and determination of charge carrier excitation spectra of two-dimensional (2D) semiconductors MoS2 and WS2 at the interface with insulating SiO2.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2019

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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