TY  - JOUR
AU  - Afanas'ev, V. V.
AU  - Schubert, J.
AU  - Neft, A.
AU  - Delie, G.
AU  - Shlyakhov, I.
AU  - Trepalin, V.
AU  - Houssa, M.
AU  - Stesmans, A.
TI  - Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents
JO  - Microelectronic engineering
VL  - 215
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - FZJ-2019-03079
SP  - 110992 -
PY  - 2019
AB  - Spectral measurements of illumination-induced displacement currents related to trapping of charge carriers optically excited in semiconductor electrodes are shown to deliver information regarding energy onsets of electron transitions at the interface. Presented examples include determination of the conduction band offset at the GaN/Al2O3 interface and determination of charge carrier excitation spectra of two-dimensional (2D) semiconductors MoS2 and WS2 at the interface with insulating SiO2.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000480665600006
DO  - DOI:10.1016/j.mee.2019.110992
UR  - https://juser.fz-juelich.de/record/862905
ER  -