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@ARTICLE{Afanasev:862905,
author = {Afanas'ev, V. V. and Schubert, J. and Neft, A. and Delie,
G. and Shlyakhov, I. and Trepalin, V. and Houssa, M. and
Stesmans, A.},
title = {{D}etermination of energy thresholds of electron
excitations at semiconductor/insulator interfaces using
trap-related displacement currents},
journal = {Microelectronic engineering},
volume = {215},
issn = {0167-9317},
address = {[S.l.] @},
publisher = {Elsevier},
reportid = {FZJ-2019-03079},
pages = {110992 -},
year = {2019},
abstract = {Spectral measurements of illumination-induced displacement
currents related to trapping of charge carriers optically
excited in semiconductor electrodes are shown to deliver
information regarding energy onsets of electron transitions
at the interface. Presented examples include determination
of the conduction band offset at the GaN/Al2O3 interface and
determination of charge carrier excitation spectra of
two-dimensional (2D) semiconductors MoS2 and WS2 at the
interface with insulating SiO2.},
cin = {PGI-9 / JARA-FIT},
ddc = {620},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000480665600006},
doi = {10.1016/j.mee.2019.110992},
url = {https://juser.fz-juelich.de/record/862905},
}