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| Home > Publications database > Vapor-Phase Deposition and Electronic Characterization of 3-Aminopropyltriethoxysilane Self-Assembled Monolayers on Silicon Dioxide |
| Home > Publications database > Vapor-Phase Deposition and Electronic Characterization of 3-Aminopropyltriethoxysilane Self-Assembled Monolayers on Silicon Dioxide |
| Journal Article | FZJ-2019-03539 |
; ; ; ;
2019
ACS Publ.
Washington, DC
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Please use a persistent id in citations: doi:10.1021/acs.langmuir.8b03832
Abstract: Although organosilanes, especially 3-aminopropyltriethoxysilane (APTES), are commonly used to functionalize oxide substrates for a variety of applications ranging from molecular/bio sensors and electronics to protective layers, a reliable and controlled deposition of these molecules re-mains a major obstacle. In this study, we use surface potential analyses to record and optimize the gas-phase deposition of APTES self-assembled monolayers (SAMs) and to determine the resulting change of the electrokinetic potential and charge at the solid–liquid interface when the system is exposed to an electrolyte. Using a gas-phase molecular layer deposition setup with an in situ molecule deposition sensor, APTES is deposited at room temperature onto ozone-activated SiO2. The resulting layers are characterized using various techniques ranging from contact angle analysis, ellipsometry, fluorescence microscopy, X-ray photoelectron spectroscopy, and electroki-netic analysis to AFM. It turns out that adequate post-deposition treatment is crucial to the for-mation of perfect molecular SAMs. We demonstrate how a thick layer of APTES molecules is initially adsorbed at the surface, however the molecules do not bind to the SiO2 and are removed if the film is exposed to an electrolyte. Only if the film is kept in a gaseous environment (prefera-ble at low pressure) for a long enough time do APTES molecules start to bind to the surface and form the SAM layer. During this time superfluous molecules are removed. The resulting modifi-cation of the electrokinetic potential at the surface is analyzed in detail for the different states.
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