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000864662 1001_ $$0P:(DE-HGF)0$$aMei, Antonio B.$$b0$$eCorresponding author
000864662 245__ $$aSelf-assembly and properties of domain walls in BiFeO3 layers grown via molecular-beam epitaxy
000864662 260__ $$aMelville, NY$$bAIP Publ.$$c2019
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000864662 520__ $$aBismuth ferrite layers, ∼200-nm-thick, are deposited on SrRuO 3 -coated DyScO 3 (110) o substrates in a step-flow growth regime via adsorption-controlled molecular-beam epitaxy. Structural characterization shows the films to be phase pure with substrate-limited mosaicity (0.012 ○x-ray diffraction ω-rocking curve widths). The film surfaces are atomically smooth (0.2 nm root-mean-square height fluctuations) and consistof 260-nm-wide [11̄1] o -oriented terraces and unit-cell-tall (0.4 nm) step edges. The combination of electrostatic and symmetry boundaryconditions promotes two monoclinically distorted BiFeO 3 ferroelectric variants, which self-assemble into a pattern with unprecedentedlycoherent periodicity, consisting of 145 ± 2-nm-wide stripe domains separated by [001] o -oriented 71 ○ domain walls. The walls exhibit electricalrectification and enhanced conductivity.
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000864662 7001_ $$0P:(DE-HGF)0$$aTang, Yongjian$$b1
000864662 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b2
000864662 7001_ $$0P:(DE-HGF)0$$aJena, Debdeep$$b3
000864662 7001_ $$0P:(DE-HGF)0$$aXing, Huili$$b4
000864662 7001_ $$0P:(DE-HGF)0$$aRalph, Daniel C.$$b5
000864662 7001_ $$0P:(DE-HGF)0$$aSchlom, Darrell G.$$b6
000864662 773__ $$0PERI:(DE-600)2722985-3$$a10.1063/1.5103244$$gVol. 7, no. 7, p. 071101 -$$n7$$p071101 -$$tAPL materials$$v7$$x2166-532X$$y2019
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