Journal Article FZJ-2019-04360

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Self-assembly and properties of domain walls in BiFeO3 layers grown via molecular-beam epitaxy

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2019
AIP Publ. Melville, NY

APL materials 7(7), 071101 - () [10.1063/1.5103244]

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Abstract: Bismuth ferrite layers, ∼200-nm-thick, are deposited on SrRuO 3 -coated DyScO 3 (110) o substrates in a step-flow growth regime via adsorption-controlled molecular-beam epitaxy. Structural characterization shows the films to be phase pure with substrate-limited mosaicity (0.012 ○x-ray diffraction ω-rocking curve widths). The film surfaces are atomically smooth (0.2 nm root-mean-square height fluctuations) and consistof 260-nm-wide [11̄1] o -oriented terraces and unit-cell-tall (0.4 nm) step edges. The combination of electrostatic and symmetry boundaryconditions promotes two monoclinically distorted BiFeO 3 ferroelectric variants, which self-assemble into a pattern with unprecedentedlycoherent periodicity, consisting of 145 ± 2-nm-wide stripe domains separated by [001] o -oriented 71 ○ domain walls. The walls exhibit electricalrectification and enhanced conductivity.

Classification:

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2019
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Medline ; Creative Commons Attribution CC BY 4.0 ; DOAJ ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; DOAJ Seal ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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 Record created 2019-08-23, last modified 2021-01-31