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@ARTICLE{Mei:864662,
author = {Mei, Antonio B. and Tang, Yongjian and Schubert, Jürgen
and Jena, Debdeep and Xing, Huili and Ralph, Daniel C. and
Schlom, Darrell G.},
title = {{S}elf-assembly and properties of domain walls in
{B}i{F}e{O}3 layers grown via molecular-beam epitaxy},
journal = {APL materials},
volume = {7},
number = {7},
issn = {2166-532X},
address = {Melville, NY},
publisher = {AIP Publ.},
reportid = {FZJ-2019-04360},
pages = {071101 -},
year = {2019},
abstract = {Bismuth ferrite layers, ∼200-nm-thick, are deposited on
SrRuO 3 -coated DyScO 3 (110) o substrates in a step-flow
growth regime via adsorption-controlled molecular-beam
epitaxy. Structural characterization shows the films to be
phase pure with substrate-limited mosaicity (0.012 ○x-ray
diffraction ω-rocking curve widths). The film surfaces are
atomically smooth (0.2 nm root-mean-square height
fluctuations) and consistof 260-nm-wide [11̄1] o -oriented
terraces and unit-cell-tall (0.4 nm) step edges. The
combination of electrostatic and symmetry boundaryconditions
promotes two monoclinically distorted BiFeO 3 ferroelectric
variants, which self-assemble into a pattern with
unprecedentedlycoherent periodicity, consisting of 145 ±
2-nm-wide stripe domains separated by [001] o -oriented 71
○ domain walls. The walls exhibit electricalrectification
and enhanced conductivity.},
cin = {PGI-9 / JARA-FIT},
ddc = {600},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000478911400011},
doi = {10.1063/1.5103244},
url = {https://juser.fz-juelich.de/record/864662},
}