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@ARTICLE{Schffelgen:866009,
      author       = {Schüffelgen, Peter and Rosenbach, Daniel and Li, Chuan and
                      Schmitt, Tobias W. and Schleenvoigt, Michael and Jalil,
                      Abdur R. and Schmitt, Sarah and Kölzer, Jonas and Wang,
                      Meng and Bennemann, Benjamin and Parlak, Umut and Kibkalo,
                      Lidia and Trellenkamp, Stefan and Grap, Thomas and Meertens,
                      Doris and Luysberg, Martina and Mussler, Gregor and
                      Berenschot, Erwin and Tas, Niels and Golubov, Alexander A.
                      and Brinkman, Alexander and Schäpers, Thomas and
                      Grützmacher, Detlev},
      title        = {{S}elective area growth and stencil lithography for in situ
                      fabricated quantum devices},
      journal      = {Nature nanotechnology},
      volume       = {14},
      number       = {9},
      issn         = {1748-3395},
      address      = {London [u.a.]},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2019-05269},
      pages        = {825 - 831},
      year         = {2019},
      abstract     = {The interplay of Dirac physics and induced
                      superconductivity at the interface of a 3D topological
                      insulator (TI) with an s-wave superconductor (S) provides a
                      new platform for topologically protected quantum computation
                      based on elusive Majorana modes. To employ such S–TI
                      hybrid devices in future topological quantum computation
                      architectures, a process is required that allows for device
                      fabrication under ultrahigh vacuum conditions. Here, we
                      report on the selective area growth of (Bi,Sb)2Te3 TI thin
                      films and stencil lithography of superconductive Nb for a
                      full in situ fabrication of S–TI hybrid devices via
                      molecular-beam epitaxy. A dielectric capping layer was
                      deposited as a final step to protect the delicate surfaces
                      of the S–TI hybrids at ambient conditions. Transport
                      experiments in as-prepared Josephson junctions show highly
                      transparent S–TI interfaces and a missing first Shapiro
                      step, which indicates the presence of Majorana bound states.
                      To move from single junctions towards complex circuitry for
                      future topological quantum computation architectures, we
                      monolithically integrated two aligned hardmasks to the
                      substrate prior to growth. The presented process provides
                      new possibilities to deliberately combine delicate quantum
                      materials in situ at the nanoscale.},
      cin          = {PGI-9 / JARA-FIT / HNF / PGI-10 / ER-C-1},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)HNF-20170116 / I:(DE-Juel1)PGI-10-20170113 /
                      I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:31358942},
      UT           = {WOS:000484601200006},
      doi          = {10.1038/s41565-019-0506-y},
      url          = {https://juser.fz-juelich.de/record/866009},
}