TY  - JOUR
AU  - Hensling, Felix V. E.
AU  - Du, Hongchu
AU  - Raab, Nicolas
AU  - Jia, Chun-Lin
AU  - Mayer, Joachim
AU  - Dittmann, Regina
TI  - Engineering antiphase boundaries in epitaxial SrTiO 3 to achieve forming free memristive devices
JO  - APL materials
VL  - 7
IS  - 10
SN  - 2166-532X
CY  - Melville, NY
PB  - AIP Publ.
M1  - FZJ-2019-05321
SP  - 101127 -
PY  - 2019
AB  - We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high miscut, which stabilizes the growth of additional SrO at the bottom interface. We prove the success of this strategy utilizing transmission electron microscopy. We find that these antiphase boundaries significantly influence the resistive switching properties. In particular, devices based on SrTiO3 thin films with intentionally induced antiphase boundaries do not require a forming step, which is ascribed to the existence of preformed filaments.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000509790200030
DO  - DOI:10.1063/1.5125211
UR  - https://juser.fz-juelich.de/record/866102
ER  -