Journal Article

FZJ-2019-05321

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Engineering antiphase boundaries in epitaxial SrTiO 3 to achieve forming free memristive devices

Hensling, F. V. E. (Corresponding author)FZJ* ; Du, H.FZJ* ; Raab, N. ; Jia, C.-L.FZJ* ; Mayer, J.FZJ* ; Dittmann, R.FZJ*

2019
AIP Publ. Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/23214  doi:10.1063/1.5125211

Abstract: We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high miscut, which stabilizes the growth of additional SrO at the bottom interface. We prove the success of this strategy utilizing transmission electron microscopy. We find that these antiphase boundaries significantly influence the resistive switching properties. In particular, devices based on SrTiO3 thin films with intentionally induced antiphase boundaries do not require a forming step, which is ascribed to the existence of preformed filaments.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)
3. Materialwissenschaft u. Werkstofftechnik (ER-C-2)
4. Physik Nanoskaliger Systeme (ER-C-1)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)
2. DFG project 167917811 - SFB 917: Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Struktur, Kinetik und Bauelementskalierung "Nanoswitches" (167917811) (167917811)

Appears in the scientific report 2019

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Database coverage:
; ; ; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; DOAJ Seal ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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