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@ARTICLE{Hensling:866102,
      author       = {Hensling, Felix V. E. and Du, Hongchu and Raab, Nicolas and
                      Jia, Chun-Lin and Mayer, Joachim and Dittmann, Regina},
      title        = {{E}ngineering antiphase boundaries in epitaxial {S}r{T}i{O}
                      3 to achieve forming free memristive devices},
      journal      = {APL materials},
      volume       = {7},
      number       = {10},
      issn         = {2166-532X},
      address      = {Melville, NY},
      publisher    = {AIP Publ.},
      reportid     = {FZJ-2019-05321},
      pages        = {101127 -},
      year         = {2019},
      abstract     = {We here present a method to engineer Ruddlesden-Popper-type
                      antiphase boundaries in stoichiometric homoepitaxial SrTiO3
                      thin films. This is achieved by using a substrate with an
                      intentionally high miscut, which stabilizes the growth of
                      additional SrO at the bottom interface. We prove the success
                      of this strategy utilizing transmission electron microscopy.
                      We find that these antiphase boundaries significantly
                      influence the resistive switching properties. In particular,
                      devices based on SrTiO3 thin films with intentionally
                      induced antiphase boundaries do not require a forming step,
                      which is ascribed to the existence of preformed filaments.},
      cin          = {PGI-7 / JARA-FIT / ER-C-2 / ER-C-1},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ER-C-2-20170209 / I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / DFG project 167917811 - SFB 917: Resistiv
                      schaltende Chalkogenide für zukünftige
                      Elektronikanwendungen: Struktur, Kinetik und
                      Bauelementskalierung "Nanoswitches" (167917811)},
      pid          = {G:(DE-HGF)POF3-521 / G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000509790200030},
      doi          = {10.1063/1.5125211},
      url          = {https://juser.fz-juelich.de/record/866102},
}