TY  - JOUR
AU  - Polyakov, Andrey
AU  - Mohseni, Katayoon
AU  - Castro, German R.
AU  - Rubio-Zuazo, Juan
AU  - Zeugner, Alexander
AU  - Isaeva, Anna
AU  - Chen, Ying-Jiun
AU  - Tusche, Christian
AU  - Meyerheim, Holger L.
TI  - A bismuth triiodide monosheet on Bi2Se3(0001)
JO  - Scientific reports
VL  - 9
IS  - 1
SN  - 2045-2322
CY  - [London]
PB  - Macmillan Publishers Limited, part of Springer Nature
M1  - FZJ-2019-05584
SP  - 4052
PY  - 2019
AB  - A stable BiI3 monosheet has been grown for the first time on the (0001) surface of the topological insulator Bi2Se3 as confirmed by scanning tunnelling microscopy, surface X-ray diffraction, and X-ray photoemision spectroscopy. BiI3 is deposited by molecular beam epitaxy from the crystalline BiTeI precursor that undergoes decomposition sublimation. The key fragment of the bulk BiI3 structure, a2∞[I—Bi—I] layer of edge-sharing BiI6 octahedra, is preserved in the ultra-thin film limit, but exhibits large atomic relaxations. The stacking sequence of the trilayers and alternations of the Bi—I distances in the monosheet are the same as in the bulk BiI3 structure. Momentum resolved photoemission spectroscopy indicates a direct band gap of 1.2 eV. The Dirac surface state is completely destroyed and a new flat band appears in the band gap of the BiI3 film that could be interpreted as an interface state.
LB  - PUB:(DE-HGF)16
C6  - pmid:30858434
UR  - <Go to ISI:>//WOS:000460751700007
DO  - DOI:10.1038/s41598-019-40506-9
UR  - https://juser.fz-juelich.de/record/866482
ER  -