Journal Article

FZJ-2019-05584

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png A bismuth triiodide monosheet on Bi2Se3(0001)

Polyakov, A. ; Mohseni, K. ; Castro, G. R. ; Rubio-Zuazo, J. ; Zeugner, A. ; Isaeva, A. ; Chen, Y.-J.FZJ* ; Tusche, C.FZJ* ; Meyerheim, H. L. (Corresponding author)

2019
Macmillan Publishers Limited, part of Springer Nature [London]

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Please use a persistent id in citations: http://hdl.handle.net/2128/23394  doi:10.1038/s41598-019-40506-9

Abstract: A stable BiI3 monosheet has been grown for the first time on the (0001) surface of the topological insulator Bi2Se3 as confirmed by scanning tunnelling microscopy, surface X-ray diffraction, and X-ray photoemision spectroscopy. BiI3 is deposited by molecular beam epitaxy from the crystalline BiTeI precursor that undergoes decomposition sublimation. The key fragment of the bulk BiI3 structure, a2∞[I—Bi—I] layer of edge-sharing BiI6 octahedra, is preserved in the ultra-thin film limit, but exhibits large atomic relaxations. The stacking sequence of the trilayers and alternations of the Bi—I distances in the monosheet are the same as in the bulk BiI3 structure. Momentum resolved photoemission spectroscopy indicates a direct band gap of 1.2 eV. The Dirac surface state is completely destroyed and a new flat band appears in the band gap of the BiI3 film that could be interpreted as an interface state.

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Contributing Institute(s):

1. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 522 - Controlling Spin-Based Phenomena (POF3-522) (POF3-522)

Appears in the scientific report 2019

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