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@ARTICLE{Polyakov:866482,
author = {Polyakov, Andrey and Mohseni, Katayoon and Castro, German
R. and Rubio-Zuazo, Juan and Zeugner, Alexander and Isaeva,
Anna and Chen, Ying-Jiun and Tusche, Christian and
Meyerheim, Holger L.},
title = {{A} bismuth triiodide monosheet on {B}i2{S}e3(0001)},
journal = {Scientific reports},
volume = {9},
number = {1},
issn = {2045-2322},
address = {[London]},
publisher = {Macmillan Publishers Limited, part of Springer Nature},
reportid = {FZJ-2019-05584},
pages = {4052},
year = {2019},
abstract = {A stable BiI3 monosheet has been grown for the first time
on the (0001) surface of the topological insulator Bi2Se3 as
confirmed by scanning tunnelling microscopy, surface X-ray
diffraction, and X-ray photoemision spectroscopy. BiI3 is
deposited by molecular beam epitaxy from the crystalline
BiTeI precursor that undergoes decomposition sublimation.
The key fragment of the bulk BiI3 structure,
a2∞[I—Bi—I] layer of edge-sharing BiI6 octahedra, is
preserved in the ultra-thin film limit, but exhibits large
atomic relaxations. The stacking sequence of the trilayers
and alternations of the Bi—I distances in the monosheet
are the same as in the bulk BiI3 structure. Momentum
resolved photoemission spectroscopy indicates a direct band
gap of 1.2 eV. The Dirac surface state is completely
destroyed and a new flat band appears in the band gap of the
BiI3 film that could be interpreted as an interface state.},
cin = {PGI-6},
ddc = {600},
cid = {I:(DE-Juel1)PGI-6-20110106},
pnm = {522 - Controlling Spin-Based Phenomena (POF3-522)},
pid = {G:(DE-HGF)POF3-522},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:30858434},
UT = {WOS:000460751700007},
doi = {10.1038/s41598-019-40506-9},
url = {https://juser.fz-juelich.de/record/866482},
}