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000872832 1001_ $$0P:(DE-Juel1)162141$$aPomaska, Manuel$$b0$$eCorresponding author
000872832 245__ $$aTransparent silicon carbide/tunnel SiO$_{2}$ passivation for c‐Si solar cell front side: Enabling J$_{sc}$ > 42 mA/cm 2 and i V$_{oc}$ of 742 mV
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000872832 520__ $$aN‐type microcrystalline silicon carbide (μc‐SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c‐Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we investigate the potential of hot wire chemical vapor deposition (HWCVD)–grown μc‐SiC:H(n) for c‐Si solar cells with interdigitated back contacts (IBC). We demonstrate outstanding passivation quality of μc‐SiC:H(n) on tunnel oxide (SiO2)–passivated c‐Si with an implied open‐circuit voltage of 742 mV and a saturation current density of 3.6 fA/cm2. This excellent passivation quality is achieved directly after the HWCVD deposition of μc‐SiC:H(n) at 250°C heater temperature without any further treatments like recrystallization or hydrogenation. Additionally, we developed magnesium fluoride (MgF2)/silicon nitride (SiNx:H)/silicon carbide antireflection coatings that reduce optical losses on the front side to only 0.47 mA/cm2 with MgF2/SiNx:H/μc‐SiC:H(n) and 0.62 mA/cm2 with MgF2/μc‐SiC:H(n). Finally, calculations with Sentaurus TCAD simulation using MgF2/μc‐SiC:H(n)/SiO2/c‐Si as front side layer stack in an IBC solar cell reveal a short‐circuit current density of 42.2 mA/cm2, an open‐circuit voltage of 738 mV, a fill factor of 85.2% and a maximum power conversion efficiency of 26.6%.
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000872832 7001_ $$0P:(DE-Juel1)165230$$aKöhler, Malte$$b1
000872832 7001_ $$00000-0003-4997-3551$$aProcel Moya, Paul$$b2
000872832 7001_ $$0P:(DE-Juel1)179571$$aZamchiy, Alexandr$$b3
000872832 7001_ $$0P:(DE-Juel1)164370$$aSingh, Aryak$$b4$$ufzj
000872832 7001_ $$0P:(DE-Juel1)167158$$aKim, Do Yun$$b5
000872832 7001_ $$00000-0001-7673-0163$$aIsabella, Olindo$$b6
000872832 7001_ $$0P:(DE-HGF)0$$aZeman, Miro$$b7
000872832 7001_ $$0P:(DE-Juel1)174415$$aLi, Shenghao$$b8$$ufzj
000872832 7001_ $$0P:(DE-Juel1)178049$$aQiu, Kaifu$$b9$$ufzj
000872832 7001_ $$0P:(DE-Juel1)178007$$aEberst, Alexander$$b10$$ufzj
000872832 7001_ $$0P:(DE-Juel1)130297$$aSmirnov, Vladimir$$b11$$ufzj
000872832 7001_ $$0P:(DE-Juel1)130238$$aFinger, Friedhelm$$b12$$ufzj
000872832 7001_ $$0P:(DE-Juel1)130285$$aRau, Uwe$$b13$$ufzj
000872832 7001_ $$0P:(DE-Juel1)130233$$aDing, Kaining$$b14$$ufzj
000872832 773__ $$0PERI:(DE-600)2023295-0$$a10.1002/pip.3244$$gp. pip.3244$$n4$$p321 - 327$$tProgress in photovoltaics$$v28$$x1099-159X$$y2020
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