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@ARTICLE{Pomaska:872832,
      author       = {Pomaska, Manuel and Köhler, Malte and Procel Moya, Paul
                      and Zamchiy, Alexandr and Singh, Aryak and Kim, Do Yun and
                      Isabella, Olindo and Zeman, Miro and Li, Shenghao and Qiu,
                      Kaifu and Eberst, Alexander and Smirnov, Vladimir and
                      Finger, Friedhelm and Rau, Uwe and Ding, Kaining},
      title        = {{T}ransparent silicon carbide/tunnel {S}i{O}$_{2}$
                      passivation for c‐{S}i solar cell front side: {E}nabling
                      {J}$_{sc}$ \> 42 m{A}/cm 2 and i {V}$_{oc}$ of 742 m{V}},
      journal      = {Progress in photovoltaics},
      volume       = {28},
      number       = {4},
      issn         = {1099-159X},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2020-00302},
      pages        = {321 - 327},
      year         = {2020},
      abstract     = {N‐type microcrystalline silicon carbide (μc‐SiC:H(n))
                      is a wide bandgap material that is very promising for the
                      use on the front side of crystalline silicon (c‐Si) solar
                      cells. It offers a high optical transparency and a suitable
                      refractive index that reduces parasitic absorption and
                      reflection losses, respectively. In this work, we
                      investigate the potential of hot wire chemical vapor
                      deposition (HWCVD)–grown μc‐SiC:H(n) for c‐Si solar
                      cells with interdigitated back contacts (IBC). We
                      demonstrate outstanding passivation quality of
                      μc‐SiC:H(n) on tunnel oxide (SiO2)–passivated c‐Si
                      with an implied open‐circuit voltage of 742 mV and a
                      saturation current density of 3.6 fA/cm2. This excellent
                      passivation quality is achieved directly after the HWCVD
                      deposition of μc‐SiC:H(n) at 250°C heater temperature
                      without any further treatments like recrystallization or
                      hydrogenation. Additionally, we developed magnesium fluoride
                      (MgF2)/silicon nitride (SiNx:H)/silicon carbide
                      antireflection coatings that reduce optical losses on the
                      front side to only 0.47 mA/cm2 with
                      MgF2/SiNx:H/μc‐SiC:H(n) and 0.62 mA/cm2 with
                      MgF2/μc‐SiC:H(n). Finally, calculations with Sentaurus
                      TCAD simulation using MgF2/μc‐SiC:H(n)/SiO2/c‐Si as
                      front side layer stack in an IBC solar cell reveal a
                      short‐circuit current density of 42.2 mA/cm2, an
                      open‐circuit voltage of 738 mV, a fill factor of $85.2\%$
                      and a maximum power conversion efficiency of $26.6\%.$},
      cin          = {IEK-5},
      ddc          = {690},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000507529600001},
      doi          = {10.1002/pip.3244},
      url          = {https://juser.fz-juelich.de/record/872832},
}