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| 024 | 7 | _ | |a 1099-159X |2 ISSN |
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| 100 | 1 | _ | |a Pomaska, Manuel |0 P:(DE-Juel1)162141 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Transparent silicon carbide/tunnel SiO$_{2}$ passivation for c‐Si solar cell front side: Enabling J$_{sc}$ > 42 mA/cm 2 and i V$_{oc}$ of 742 mV |
| 260 | _ | _ | |a Chichester |c 2020 |b Wiley |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a N‐type microcrystalline silicon carbide (μc‐SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c‐Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we investigate the potential of hot wire chemical vapor deposition (HWCVD)–grown μc‐SiC:H(n) for c‐Si solar cells with interdigitated back contacts (IBC). We demonstrate outstanding passivation quality of μc‐SiC:H(n) on tunnel oxide (SiO2)–passivated c‐Si with an implied open‐circuit voltage of 742 mV and a saturation current density of 3.6 fA/cm2. This excellent passivation quality is achieved directly after the HWCVD deposition of μc‐SiC:H(n) at 250°C heater temperature without any further treatments like recrystallization or hydrogenation. Additionally, we developed magnesium fluoride (MgF2)/silicon nitride (SiNx:H)/silicon carbide antireflection coatings that reduce optical losses on the front side to only 0.47 mA/cm2 with MgF2/SiNx:H/μc‐SiC:H(n) and 0.62 mA/cm2 with MgF2/μc‐SiC:H(n). Finally, calculations with Sentaurus TCAD simulation using MgF2/μc‐SiC:H(n)/SiO2/c‐Si as front side layer stack in an IBC solar cell reveal a short‐circuit current density of 42.2 mA/cm2, an open‐circuit voltage of 738 mV, a fill factor of 85.2% and a maximum power conversion efficiency of 26.6%. |
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| 700 | 1 | _ | |a Köhler, Malte |0 P:(DE-Juel1)165230 |b 1 |
| 700 | 1 | _ | |a Procel Moya, Paul |0 0000-0003-4997-3551 |b 2 |
| 700 | 1 | _ | |a Zamchiy, Alexandr |0 P:(DE-Juel1)179571 |b 3 |
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| 700 | 1 | _ | |a Kim, Do Yun |0 P:(DE-Juel1)167158 |b 5 |
| 700 | 1 | _ | |a Isabella, Olindo |0 0000-0001-7673-0163 |b 6 |
| 700 | 1 | _ | |a Zeman, Miro |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Li, Shenghao |0 P:(DE-Juel1)174415 |b 8 |u fzj |
| 700 | 1 | _ | |a Qiu, Kaifu |0 P:(DE-Juel1)178049 |b 9 |u fzj |
| 700 | 1 | _ | |a Eberst, Alexander |0 P:(DE-Juel1)178007 |b 10 |u fzj |
| 700 | 1 | _ | |a Smirnov, Vladimir |0 P:(DE-Juel1)130297 |b 11 |u fzj |
| 700 | 1 | _ | |a Finger, Friedhelm |0 P:(DE-Juel1)130238 |b 12 |u fzj |
| 700 | 1 | _ | |a Rau, Uwe |0 P:(DE-Juel1)130285 |b 13 |u fzj |
| 700 | 1 | _ | |a Ding, Kaining |0 P:(DE-Juel1)130233 |b 14 |u fzj |
| 773 | _ | _ | |a 10.1002/pip.3244 |g p. pip.3244 |0 PERI:(DE-600)2023295-0 |n 4 |p 321 - 327 |t Progress in photovoltaics |v 28 |y 2020 |x 1099-159X |
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