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@INPROCEEDINGS{Liu:873712,
      author       = {Liu, Mingshan and Scholz, Stefan and Mertens, Konstantin
                      and Bae, Jin Hee and Hartmann, Jean-Michel and Knoch,
                      Joachem and Buca, Dan Mihai and Zhao, Qing-Tai},
      title        = {{F}irst {D}emonstration of {V}ertical {G}e0.92{S}n0.08/{G}e
                      and {G}e {GAA} {N}anowirep{MOSFET}s with {L}ow {SS} of 66
                      m{V}/dec and {S}mall {DIBL} of 35 m{V}/{V}},
      reportid     = {FZJ-2020-00935},
      pages        = {693-696},
      year         = {2019},
      month         = {Dec},
      date          = {2019-12-09},
      organization  = {International Electron Device Meeting,
                       San Fransisco (USA), 9 Dec 2019 - 11
                       Dec 2019},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      url          = {https://juser.fz-juelich.de/record/873712},
}