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@ARTICLE{vondenDriesch:874249,
      author       = {von den Driesch, Nils and Wirths, Stephan and Troitsch,
                      Rene and Mussler, Gregor and Breuer, Uwe and Moutanabbir,
                      Oussama and Grützmacher, Detlev and Buca, Dan},
      title        = {{T}hermally activated diffusion and lattice relaxation in
                      ({S}i){G}e{S}n materials},
      journal      = {Physical review materials},
      volume       = {4},
      number       = {3},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2020-01340},
      pages        = {033604},
      year         = {2020},
      abstract     = {Germanium-tin (GeSn) alloys have emerged as a promising
                      material for future optoelectronics, energy harvesting, and
                      nanoelectronics owing to their direct band gap and
                      compatibility with existing Si-based electronics. Yet, their
                      metastability poses significant challenges calling for
                      in-depth investigations of their thermal behavior. With this
                      perspective, this work addresses the interdiffusion
                      processes throughout thermal annealing of pseudomorphic GeSn
                      binary and SiGeSn ternary alloys. In both systems, the
                      initially pseudomorphic layers are relaxed upon annealing
                      exclusively via thermally induced diffusional mass transfer
                      of Sn. Systematic postgrowth annealing experiments reveal
                      enhanced Sn and Si diffusion regimes that manifest at
                      temperatures below 650 °C. The amplified low-temperature
                      diffusion and the observation of only subtle differences
                      between binary and ternary hint at the unique metastability
                      of the Si-Ge-Sn material system as the most important
                      driving force for phase separation.},
      cin          = {PGI-9 / ZEA-3 / PGI-10 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ZEA-3-20090406 /
                      I:(DE-Juel1)PGI-10-20170113 / I:(DE-Juel1)VDB881},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000521131900001},
      doi          = {10.1103/PhysRevMaterials.4.033604},
      url          = {https://juser.fz-juelich.de/record/874249},
}