Journal Article FZJ-2020-01340

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Thermally activated diffusion and lattice relaxation in (Si)GeSn materials

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2020
APS College Park, MD

Physical review materials 4(3), 033604 () [10.1103/PhysRevMaterials.4.033604]

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Abstract: Germanium-tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting, and nanoelectronics owing to their direct band gap and compatibility with existing Si-based electronics. Yet, their metastability poses significant challenges calling for in-depth investigations of their thermal behavior. With this perspective, this work addresses the interdiffusion processes throughout thermal annealing of pseudomorphic GeSn binary and SiGeSn ternary alloys. In both systems, the initially pseudomorphic layers are relaxed upon annealing exclusively via thermally induced diffusional mass transfer of Sn. Systematic postgrowth annealing experiments reveal enhanced Sn and Si diffusion regimes that manifest at temperatures below 650 °C. The amplified low-temperature diffusion and the observation of only subtle differences between binary and ternary hint at the unique metastability of the Si-Ge-Sn material system as the most important driving force for phase separation.

Classification:

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. Analytik (ZEA-3)
  3. JARA Institut Green IT (PGI-10)
  4. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2020
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Creative Commons Attribution CC BY 4.0 ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Science Citation Index Expanded ; Web of Science Core Collection
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Institute Collections > PGI > PGI-9
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 Record created 2020-03-02, last modified 2022-09-30