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@ARTICLE{Das:874352,
author = {Das, Basita and Aguilera, Irene and Rau, Uwe and Kirchartz,
Thomas},
title = {{W}hat is a deep defect? {C}ombining
{S}hockley-{R}ead-{H}all statistics with multiphonon
recombination theory},
journal = {Physical review materials},
volume = {4},
number = {2},
issn = {2475-9953},
address = {College Park, MD},
publisher = {APS},
reportid = {FZJ-2020-01384},
pages = {024602},
year = {2020},
abstract = {Slow nonradiative recombination is a key factor in
achieving high open-circuit voltages or high luminescence
yields in any optoelectronic material. Whether a defect is
contributing substantially to nonradiative recombination is
often estimated by defect statistics based on the model by
Shockley, Read, and Hall. However, defect statistics are
agnostic to the origin of the capture coefficients and
therefore conclude that essentially every defect between the
two quasi-Fermi levels is equally likely to be a
recombination-active defect. Here, we combine
Shockley-Read-Hall statistics with microscopic models for
defect-assisted recombination to study how the microscopic
properties of a material affect how recombination active a
defect is depending on its energy level. We then use
material parameters representative of typical photovoltaic
absorber materials (CH3NH3PbI3, Si, and GaAs) to illustrate
the relevance, but also the limitations of our model.},
cin = {IEK-5},
ddc = {530},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {121 - Solar cells of the next generation (POF3-121)},
pid = {G:(DE-HGF)POF3-121},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000517304500004},
doi = {10.1103/PhysRevMaterials.4.024602},
url = {https://juser.fz-juelich.de/record/874352},
}