% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Das:874352,
      author       = {Das, Basita and Aguilera, Irene and Rau, Uwe and Kirchartz,
                      Thomas},
      title        = {{W}hat is a deep defect? {C}ombining
                      {S}hockley-{R}ead-{H}all statistics with multiphonon
                      recombination theory},
      journal      = {Physical review materials},
      volume       = {4},
      number       = {2},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2020-01384},
      pages        = {024602},
      year         = {2020},
      abstract     = {Slow nonradiative recombination is a key factor in
                      achieving high open-circuit voltages or high luminescence
                      yields in any optoelectronic material. Whether a defect is
                      contributing substantially to nonradiative recombination is
                      often estimated by defect statistics based on the model by
                      Shockley, Read, and Hall. However, defect statistics are
                      agnostic to the origin of the capture coefficients and
                      therefore conclude that essentially every defect between the
                      two quasi-Fermi levels is equally likely to be a
                      recombination-active defect. Here, we combine
                      Shockley-Read-Hall statistics with microscopic models for
                      defect-assisted recombination to study how the microscopic
                      properties of a material affect how recombination active a
                      defect is depending on its energy level. We then use
                      material parameters representative of typical photovoltaic
                      absorber materials (CH3NH3PbI3, Si, and GaAs) to illustrate
                      the relevance, but also the limitations of our model.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000517304500004},
      doi          = {10.1103/PhysRevMaterials.4.024602},
      url          = {https://juser.fz-juelich.de/record/874352},
}