TY  - JOUR
AU  - Yao, Zhirong
AU  - Cai, Lun
AU  - Meng, Lanxiang
AU  - Qiu, Kaifu
AU  - Lin, Wenjie
AU  - Jin, Jingsheng
AU  - Duan, Weiyuan
AU  - Ding, Kaining
AU  - Li, Shenghao
AU  - Ai, Bin
AU  - Liang, Zongcun
AU  - Shen, Hui
TI  - High‐Performance and Stable Dopant‐Free Silicon Solar Cells with Magnesium Acetylacetonate Electron‐Selective Contacts
JO  - Physica status solidi / Rapid research letters Rapid research letters
VL  - 14
IS  - 6
SN  - 1862-6270
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2020-01873
SP  - 2000103
PY  - 2020
AB  - One of the challenges in fabricating high‐performance n‐type crystalline silicon (n‐type c‐Si) solar cells is the high‐quality n‐type c‐Si/metal contact. Schottky barriers are commonly found on the n‐type c‐Si/metal contact, which suppresses electron transportation. Herein, novel stacks of magnesium acetylacetonate (Mg(Acac)2)/magnesium (Mg)/silver (Ag) to form electron‐selective contacts for n‐type c‐Si solar cells are presented, which enables a dopant‐free process. An ohmic contact on n‐type c‐Si is formed using the Mg(Acac)2/Mg/Ag stacks. The transmission spectrum and ultraviolet photoelectron spectroscopy measurements show negligible conduction‐band offset and large valence‐band offset between Mg(Acac)2 and n‐type c‐Si, which indicates the electron‐transporting and hole‐blocking properties of Mg(Acac)2/n‐type c‐Si heterocontacts. Moreover, the contact resistivities (ρ c ) between the Mg(Acac)2/Mg/Ag electron‐selective heterocontacts and n‐type c‐Si substrates are lower than 10 mΩ cm2, which demonstrates the good electrode properties of the Mg(Acac)2/Mg/Ag stacks. The Mg(Acac)2/Mg/Ag electron‐selective stacks are applied on n‐type c‐Si solar cells with partial rear contact, and >20% efficiency is achieved, which is higher than that in a reference cell with only Ag contact. The stability of the n‐type c‐Si solar cell performance equipped with Mg(Acac)2/Mg/Ag contacts is verified under ambient conditions. This novel low‐temperature contact technique offers a reliable alternative for high‐performance n‐type c‐Si solar cells.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000528615100001
DO  - DOI:10.1002/pssr.202000103
UR  - https://juser.fz-juelich.de/record/875205
ER  -