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@ARTICLE{Yao:875205,
      author       = {Yao, Zhirong and Cai, Lun and Meng, Lanxiang and Qiu, Kaifu
                      and Lin, Wenjie and Jin, Jingsheng and Duan, Weiyuan and
                      Ding, Kaining and Li, Shenghao and Ai, Bin and Liang,
                      Zongcun and Shen, Hui},
      title        = {{H}igh‐{P}erformance and {S}table {D}opant‐{F}ree
                      {S}ilicon {S}olar {C}ells with {M}agnesium {A}cetylacetonate
                      {E}lectron‐{S}elective {C}ontacts},
      journal      = {Physica status solidi / Rapid research letters Rapid
                      research letters},
      volume       = {14},
      number       = {6},
      issn         = {1862-6270},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2020-01873},
      pages        = {2000103},
      year         = {2020},
      abstract     = {One of the challenges in fabricating high‐performance
                      n‐type crystalline silicon (n‐type c‐Si) solar cells
                      is the high‐quality n‐type c‐Si/metal contact.
                      Schottky barriers are commonly found on the n‐type
                      c‐Si/metal contact, which suppresses electron
                      transportation. Herein, novel stacks of magnesium
                      acetylacetonate (Mg(Acac)2)/magnesium (Mg)/silver (Ag) to
                      form electron‐selective contacts for n‐type c‐Si solar
                      cells are presented, which enables a dopant‐free process.
                      An ohmic contact on n‐type c‐Si is formed using the
                      Mg(Acac)2/Mg/Ag stacks. The transmission spectrum and
                      ultraviolet photoelectron spectroscopy measurements show
                      negligible conduction‐band offset and large valence‐band
                      offset between Mg(Acac)2 and n‐type c‐Si, which
                      indicates the electron‐transporting and hole‐blocking
                      properties of Mg(Acac)2/n‐type c‐Si heterocontacts.
                      Moreover, the contact resistivities (ρ c ) between the
                      Mg(Acac)2/Mg/Ag electron‐selective heterocontacts and
                      n‐type c‐Si substrates are lower than 10 mΩ cm2,
                      which demonstrates the good electrode properties of the
                      Mg(Acac)2/Mg/Ag stacks. The Mg(Acac)2/Mg/Ag
                      electron‐selective stacks are applied on n‐type c‐Si
                      solar cells with partial rear contact, and $>20\%$
                      efficiency is achieved, which is higher than that in a
                      reference cell with only Ag contact. The stability of the
                      n‐type c‐Si solar cell performance equipped with
                      Mg(Acac)2/Mg/Ag contacts is verified under ambient
                      conditions. This novel low‐temperature contact technique
                      offers a reliable alternative for high‐performance
                      n‐type c‐Si solar cells.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000528615100001},
      doi          = {10.1002/pssr.202000103},
      url          = {https://juser.fz-juelich.de/record/875205},
}