%0 Journal Article
%A Lübben, M.
%A Cüppers, F.
%A Mohr, J.
%A von Witzleben, M.
%A Breuer, U.
%A Waser, R.
%A Neumann, C.
%A Valov, I.
%T Design of defect-chemical properties and device performance in memristive systems
%J Science advances
%V 6
%N 19
%@ 2375-2548
%C Washington, DC [u.a.]
%I Assoc.
%M FZJ-2020-02011
%P eaaz9079 -
%D 2020
%X Future development of the modern nanoelectronics and its flagships internet of things, artificial intelligence, and neuromorphic computing is largely associated with memristive elements, offering a spectrum of inevitable functionalities, atomic level scalability, and low-power operation. However, their development is limited by significant variability and still phenomenologically orientated materials’ design strategy. Here, we highlight the vital importance of materials’ purity, demonstrating that even parts-per-million foreign elements substantially change performance. Appropriate choice of chemistry and amount of doping element selectively enhances the desired functionality. Dopant/impurity-dependent structure and charge/potential distribution in the space-charge layers and cell capacitance determine the device kinetics and functions. The relation between chemical composition/purity and switching/neuromorphic performance is experimentally evidenced, providing directions for a rational design of future memristive devices.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:32548248
%U <Go to ISI:>//WOS:000531171100032
%R 10.1126/sciadv.aaz9079
%U https://juser.fz-juelich.de/record/875402