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Journal Article | FZJ-2020-02011 |
; ; ; ; ; ; ;
2020
Assoc.
Washington, DC [u.a.]
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Please use a persistent id in citations: http://hdl.handle.net/2128/24890 doi:10.1126/sciadv.aaz9079
Abstract: Future development of the modern nanoelectronics and its flagships internet of things, artificial intelligence, and neuromorphic computing is largely associated with memristive elements, offering a spectrum of inevitable functionalities, atomic level scalability, and low-power operation. However, their development is limited by significant variability and still phenomenologically orientated materials’ design strategy. Here, we highlight the vital importance of materials’ purity, demonstrating that even parts-per-million foreign elements substantially change performance. Appropriate choice of chemistry and amount of doping element selectively enhances the desired functionality. Dopant/impurity-dependent structure and charge/potential distribution in the space-charge layers and cell capacitance determine the device kinetics and functions. The relation between chemical composition/purity and switching/neuromorphic performance is experimentally evidenced, providing directions for a rational design of future memristive devices.
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