TY  - JOUR
AU  - Lübben, M.
AU  - Cüppers, F.
AU  - Mohr, J.
AU  - von Witzleben, M.
AU  - Breuer, U.
AU  - Waser, R.
AU  - Neumann, C.
AU  - Valov, I.
TI  - Design of defect-chemical properties and device performance in memristive systems
JO  - Science advances
VL  - 6
IS  - 19
SN  - 2375-2548
CY  - Washington, DC [u.a.]
PB  - Assoc.
M1  - FZJ-2020-02011
SP  - eaaz9079 -
PY  - 2020
AB  - Future development of the modern nanoelectronics and its flagships internet of things, artificial intelligence, and neuromorphic computing is largely associated with memristive elements, offering a spectrum of inevitable functionalities, atomic level scalability, and low-power operation. However, their development is limited by significant variability and still phenomenologically orientated materials’ design strategy. Here, we highlight the vital importance of materials’ purity, demonstrating that even parts-per-million foreign elements substantially change performance. Appropriate choice of chemistry and amount of doping element selectively enhances the desired functionality. Dopant/impurity-dependent structure and charge/potential distribution in the space-charge layers and cell capacitance determine the device kinetics and functions. The relation between chemical composition/purity and switching/neuromorphic performance is experimentally evidenced, providing directions for a rational design of future memristive devices.
LB  - PUB:(DE-HGF)16
C6  - pmid:32548248
UR  - <Go to ISI:>//WOS:000531171100032
DO  - DOI:10.1126/sciadv.aaz9079
UR  - https://juser.fz-juelich.de/record/875402
ER  -