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@ARTICLE{Lbben:875402,
      author       = {Lübben, M. and Cüppers, F. and Mohr, J. and von
                      Witzleben, M. and Breuer, U. and Waser, R. and Neumann, C.
                      and Valov, I.},
      title        = {{D}esign of defect-chemical properties and device
                      performance in memristive systems},
      journal      = {Science advances},
      volume       = {6},
      number       = {19},
      issn         = {2375-2548},
      address      = {Washington, DC [u.a.]},
      publisher    = {Assoc.},
      reportid     = {FZJ-2020-02011},
      pages        = {eaaz9079 -},
      year         = {2020},
      abstract     = {Future development of the modern nanoelectronics and its
                      flagships internet of things, artificial intelligence, and
                      neuromorphic computing is largely associated with memristive
                      elements, offering a spectrum of inevitable functionalities,
                      atomic level scalability, and low-power operation. However,
                      their development is limited by significant variability and
                      still phenomenologically orientated materials’ design
                      strategy. Here, we highlight the vital importance of
                      materials’ purity, demonstrating that even
                      parts-per-million foreign elements substantially change
                      performance. Appropriate choice of chemistry and amount of
                      doping element selectively enhances the desired
                      functionality. Dopant/impurity-dependent structure and
                      charge/potential distribution in the space-charge layers and
                      cell capacitance determine the device kinetics and
                      functions. The relation between chemical composition/purity
                      and switching/neuromorphic performance is experimentally
                      evidenced, providing directions for a rational design of
                      future memristive devices.},
      cin          = {PGI-7 / JARA-FIT / PGI-10 / ZEA-3},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113 / I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:32548248},
      UT           = {WOS:000531171100032},
      doi          = {10.1126/sciadv.aaz9079},
      url          = {https://juser.fz-juelich.de/record/875402},
}