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001     875402
005     20220930130238.0
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100 1 _ |a Lübben, M.
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245 _ _ |a Design of defect-chemical properties and device performance in memristive systems
260 _ _ |a Washington, DC [u.a.]
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520 _ _ |a Future development of the modern nanoelectronics and its flagships internet of things, artificial intelligence, and neuromorphic computing is largely associated with memristive elements, offering a spectrum of inevitable functionalities, atomic level scalability, and low-power operation. However, their development is limited by significant variability and still phenomenologically orientated materials’ design strategy. Here, we highlight the vital importance of materials’ purity, demonstrating that even parts-per-million foreign elements substantially change performance. Appropriate choice of chemistry and amount of doping element selectively enhances the desired functionality. Dopant/impurity-dependent structure and charge/potential distribution in the space-charge layers and cell capacitance determine the device kinetics and functions. The relation between chemical composition/purity and switching/neuromorphic performance is experimentally evidenced, providing directions for a rational design of future memristive devices.
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700 1 _ |a Cüppers, F.
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700 1 _ |a Mohr, J.
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700 1 _ |a von Witzleben, M.
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700 1 _ |a Breuer, U.
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700 1 _ |a Waser, R.
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700 1 _ |a Neumann, C.
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700 1 _ |a Valov, I.
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773 _ _ |a 10.1126/sciadv.aaz9079
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