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@ARTICLE{Gunkel:875405,
author = {Gunkel, F. and Christensen, D. V. and Chen, Y. Z. and
Pryds, N.},
title = {{O}xygen vacancies: {T}he (in)visible friend of oxide
electronics},
journal = {Applied physics letters},
volume = {116},
number = {12},
issn = {1077-3118},
address = {Melville, NY},
publisher = {American Inst. of Physics},
reportid = {FZJ-2020-02014},
pages = {120505 -},
year = {2020},
abstract = {Oxygen vacancies play crucial roles in determining the
physical properties of metal oxides, representing important
building blocks in many scientific and technological fields
due to their unique chemical, physical, and electronic
properties. However, oxygen vacancies are often invisible
because of their dilute concentrations. Therefore,
characterizing and quantifying their presence is of utmost
importance for understanding and realizing functional metal
oxide devices. This, however, is oftentimes a non-trivial
task. In this Perspective paper, we discuss the relevant
regimes of concentrations and associated phenomena arising
from oxygen vacancies. We then focus on experimental
techniques available for observing oxygen vacancies at
widely different levels of concentrations. Finally, we
discuss current challenges and opportunities for utilizing
oxygen vacancies in metal oxides.},
cin = {PGI-7 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000522431800001},
doi = {10.1063/1.5143309},
url = {https://juser.fz-juelich.de/record/875405},
}