Journal Article

FZJ-2020-02014

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Oxygen vacancies: The (in)visible friend of oxide electronics

Gunkel, F. (Corresponding author)FZJ* ; Christensen, D. V. ; Chen, Y. Z.Extern* ; Pryds, N.

2020
American Inst. of Physics Melville, NY

This record in other databases:    

Please use a persistent id in citations: http://hdl.handle.net/2128/24893  doi:10.1063/1.5143309

Abstract: Oxygen vacancies play crucial roles in determining the physical properties of metal oxides, representing important building blocks in many scientific and technological fields due to their unique chemical, physical, and electronic properties. However, oxygen vacancies are often invisible because of their dilute concentrations. Therefore, characterizing and quantifying their presence is of utmost importance for understanding and realizing functional metal oxide devices. This, however, is oftentimes a non-trivial task. In this Perspective paper, we discuss the relevant regimes of concentrations and associated phenomena arising from oxygen vacancies. We then focus on experimental techniques available for observing oxygen vacancies at widely different levels of concentrations. Finally, we discuss current challenges and opportunities for utilizing oxygen vacancies in metal oxides.

---

Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2020

---

Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; National-Konsortium ; Nationallizenz ; PubMed Central ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

---