%0 Journal Article
%A Banszerus, Luca
%A Möller, Samuel
%A Icking, Eike
%A Watanabe, Kenji
%A Taniguchi, Takashi
%A Volk, Christian
%A Stampfer, Christoph
%T Single-Electron Double Quantum Dots in Bilayer Graphene
%J Nano letters
%V 20
%N 3
%@ 1530-6992
%C Washington, DC
%I ACS Publ.
%M FZJ-2020-02154
%P 2005 - 2011
%D 2020
%X We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single-electron regime. With the help of a back gate, two split gates, and two finger gates, we are able to control the number of charge carriers on two gate-defined quantum dots independently between zero and five. The high tunability of the device meets requirements to make such a device a suitable building block for spin-qubits. In the single-electron regime, we determine interdot tunnel rates on the order of 2 GHz. Both, the interdot tunnel coupling as well as the capacitive interdot coupling increase with dot occupation, leading to the transition to a single quantum dot. Finite bias magneto-spectroscopy measurements allow to resolve the excited-state spectra of the first electrons in the double quantum dot and are in agreement with spin and valley conserving interdot tunneling processes.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:32083885
%U <Go to ISI:>//WOS:000526408800068
%R 10.1021/acs.nanolett.9b05295
%U https://juser.fz-juelich.de/record/877347