Journal Article

FZJ-2020-02154

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Single-Electron Double Quantum Dots in Bilayer Graphene

Banszerus, L. (Corresponding author)FZJ*RWTH* ; Möller, S.FZJ*RWTH* ; Icking, E.FZJ* ; Watanabe, K. ; Taniguchi, T. ; Volk, C.RWTH* ; Stampfer, C.FZJ*RWTH*

2020
ACS Publ. Washington, DC

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Please use a persistent id in citations: http://hdl.handle.net/2128/25139  doi:10.1021/acs.nanolett.9b05295

Abstract: We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single-electron regime. With the help of a back gate, two split gates, and two finger gates, we are able to control the number of charge carriers on two gate-defined quantum dots independently between zero and five. The high tunability of the device meets requirements to make such a device a suitable building block for spin-qubits. In the single-electron regime, we determine interdot tunnel rates on the order of 2 GHz. Both, the interdot tunnel coupling as well as the capacitive interdot coupling increase with dot occupation, leading to the transition to a single quantum dot. Finite bias magneto-spectroscopy measurements allow to resolve the excited-state spectra of the first electrons in the double quantum dot and are in agreement with spin and valley conserving interdot tunneling processes.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2020

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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