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037 | _ | _ | |a FZJ-2020-02154 |
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100 | 1 | _ | |a Banszerus, Luca |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
245 | _ | _ | |a Single-Electron Double Quantum Dots in Bilayer Graphene |
260 | _ | _ | |a Washington, DC |c 2020 |b ACS Publ. |
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520 | _ | _ | |a We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single-electron regime. With the help of a back gate, two split gates, and two finger gates, we are able to control the number of charge carriers on two gate-defined quantum dots independently between zero and five. The high tunability of the device meets requirements to make such a device a suitable building block for spin-qubits. In the single-electron regime, we determine interdot tunnel rates on the order of 2 GHz. Both, the interdot tunnel coupling as well as the capacitive interdot coupling increase with dot occupation, leading to the transition to a single quantum dot. Finite bias magneto-spectroscopy measurements allow to resolve the excited-state spectra of the first electrons in the double quantum dot and are in agreement with spin and valley conserving interdot tunneling processes. |
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700 | 1 | _ | |a Möller, Samuel |0 P:(DE-HGF)0 |b 1 |
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700 | 1 | _ | |a Taniguchi, Takashi |0 P:(DE-HGF)0 |b 4 |
700 | 1 | _ | |a Volk, Christian |0 P:(DE-HGF)0 |b 5 |
700 | 1 | _ | |a Stampfer, Christoph |0 P:(DE-Juel1)180322 |b 6 |u fzj |
773 | _ | _ | |a 10.1021/acs.nanolett.9b05295 |g Vol. 20, no. 3, p. 2005 - 2011 |0 PERI:(DE-600)2048866-X |n 3 |p 2005 - 2011 |t Nano letters |v 20 |y 2020 |x 1530-6992 |
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