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| 001 | 877350 | ||
| 005 | 20230217105306.0 | ||
| 024 | 7 | _ | |2 doi |a 10.1002/pssb.202000007 |
| 024 | 7 | _ | |2 ISSN |a 0031-8957 |
| 024 | 7 | _ | |2 ISSN |a 0370-1972 |
| 024 | 7 | _ | |2 ISSN |a 1521-3951 |
| 024 | 7 | _ | |2 Handle |a 2128/27316 |
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| 037 | _ | _ | |a FZJ-2020-02157 |
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| 100 | 1 | _ | |0 P:(DE-Juel1)128617 |a Mussler, Gregor |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Molecular‐Beam Epitaxy of 3D Topological Insulator Thin Films and Devices on Si Substrates |
| 260 | _ | _ | |a Weinheim |b Wiley-VCH |c 2021 |
| 336 | 7 | _ | |2 DRIVER |a article |
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| 520 | _ | _ | |a Topological insulators (TIs) are currently in the focus of interest due to their intriguing physical properties related to topologically protected surface states. The ability to grow thin films of these complex layered materials and even sophisticated devices is the key to explore their fundamental phenomena, giving insights into modern solid‐state physics. However, complex materials composed of layers only weakly bonded via van der Waals (vdW) forces offer unmatched challenges for the deposition of thin epitaxial films. Herein, it is reported on the growth of (Bi,Sb)2(Te,Se)3 TI films on Si (111) substrates using molecular‐beam epitaxy. Special issues are discussed, such as understanding the peculiar vdW growth mode, observing and annihilating crystal defects, reducing bulk carrier concentration, tuning the Fermi level to the Dirac point, and, finally, fabricating TI/superconductor devices fully in situ. |
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| 773 | _ | _ | |0 PERI:(DE-600)1481096-7 |a 10.1002/pssb.202000007 |g p. 2000007 - |n 1 |p 2000007 |t Physica status solidi / B |v 258 |x 0370-1972 |y 2021 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/877350/files/pssb.202000007.pdf |y OpenAccess |
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