Journal Article

FZJ-2020-02157

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Molecular‐Beam Epitaxy of 3D Topological Insulator Thin Films and Devices on Si Substrates

Mussler, G. (Corresponding author)FZJ*

2021
Wiley-VCH Weinheim

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Please use a persistent id in citations: http://hdl.handle.net/2128/27316  doi:10.1002/pssb.202000007

Abstract: Topological insulators (TIs) are currently in the focus of interest due to their intriguing physical properties related to topologically protected surface states. The ability to grow thin films of these complex layered materials and even sophisticated devices is the key to explore their fundamental phenomena, giving insights into modern solid‐state physics. However, complex materials composed of layers only weakly bonded via van der Waals (vdW) forces offer unmatched challenges for the deposition of thin epitaxial films. Herein, it is reported on the growth of (Bi,Sb)2(Te,Se)3 TI films on Si (111) substrates using molecular‐beam epitaxy. Special issues are discussed, such as understanding the peculiar vdW growth mode, observing and annihilating crystal defects, reducing bulk carrier concentration, tuning the Fermi level to the Dirac point, and, finally, fabricating TI/superconductor devices fully in situ.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 899 - ohne Topic (POF4-899) (POF4-899)

Appears in the scientific report 2021

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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