TY  - JOUR
AU  - Banszerus, L.
AU  - Frohn, B.
AU  - Epping, A.
AU  - Neumaier, D.
AU  - Watanabe, K.
AU  - Taniguchi, T.
AU  - Stampfer, Christoph
TI  - Gate-Defined Electron–Hole Double Dots in Bilayer Graphene
JO  - Nano letters
VL  - 18
IS  - 8
SN  - 1530-6992
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2020-02424
SP  - 4785 - 4790
PY  - 2018
AB  - We present gate-controlled single-, double-, and triple-dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal boron nitride and the use of graphite gates, it has become possible to electrostatically confine carriers in bilayer graphene and to completely pinch-off current through quantum dot devices. Here, we discuss the operation and characterization of electron–hole double dots. We show a remarkable degree of control of our device, which allows the implementation of two different gate-defined electron–hole double-dot systems with very similar energy scales. In the single-dot regime, we extract excited state energies and investigate their evolution in a parallel magnetic field, which is in agreement with a Zeeman-spin-splitting expected for a g-factor of 2.
LB  - PUB:(DE-HGF)16
C6  - pmid:29949375
UR  - <Go to ISI:>//WOS:000441478300023
DO  - DOI:10.1021/acs.nanolett.8b01303
UR  - https://juser.fz-juelich.de/record/877723
ER  -