Journal Article

FZJ-2020-02424

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Gate-Defined Electron–Hole Double Dots in Bilayer Graphene

Banszerus, L. (Corresponding author)RWTH*FZJ* ; Frohn, B.RWTH* ; Epping, A.FZJ*RWTH* ; Neumaier, D.RWTH* ; Watanabe, K. ; Taniguchi, T. ; Stampfer, C.FZJ*RWTH*

2018
ACS Publ. Washington, DC

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Please use a persistent id in citations: http://hdl.handle.net/2128/25349  doi:10.1021/acs.nanolett.8b01303

Abstract: We present gate-controlled single-, double-, and triple-dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal boron nitride and the use of graphite gates, it has become possible to electrostatically confine carriers in bilayer graphene and to completely pinch-off current through quantum dot devices. Here, we discuss the operation and characterization of electron–hole double dots. We show a remarkable degree of control of our device, which allows the implementation of two different gate-defined electron–hole double-dot systems with very similar energy scales. In the single-dot regime, we extract excited state energies and investigate their evolution in a parallel magnetic field, which is in agreement with a Zeeman-spin-splitting expected for a g-factor of 2.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2020

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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