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@ARTICLE{Banszerus:877723,
      author       = {Banszerus, L. and Frohn, B. and Epping, A. and Neumaier, D.
                      and Watanabe, K. and Taniguchi, T. and Stampfer, Christoph},
      title        = {{G}ate-{D}efined {E}lectron–{H}ole {D}ouble {D}ots in
                      {B}ilayer {G}raphene},
      journal      = {Nano letters},
      volume       = {18},
      number       = {8},
      issn         = {1530-6992},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2020-02424},
      pages        = {4785 - 4790},
      year         = {2018},
      abstract     = {We present gate-controlled single-, double-, and triple-dot
                      operation in electrostatically gapped bilayer graphene.
                      Thanks to the recent advancements in sample fabrication,
                      which include the encapsulation of bilayer graphene in
                      hexagonal boron nitride and the use of graphite gates, it
                      has become possible to electrostatically confine carriers in
                      bilayer graphene and to completely pinch-off current through
                      quantum dot devices. Here, we discuss the operation and
                      characterization of electron–hole double dots. We show a
                      remarkable degree of control of our device, which allows the
                      implementation of two different gate-defined electron–hole
                      double-dot systems with very similar energy scales. In the
                      single-dot regime, we extract excited state energies and
                      investigate their evolution in a parallel magnetic field,
                      which is in agreement with a Zeeman-spin-splitting expected
                      for a g-factor of 2.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {660},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:29949375},
      UT           = {WOS:000441478300023},
      doi          = {10.1021/acs.nanolett.8b01303},
      url          = {https://juser.fz-juelich.de/record/877723},
}