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@ARTICLE{Banszerus:877751,
      author       = {Banszerus, Luca and Watanabe, Kenji and Taniguchi, Takashi
                      and Beschoten, Bernd and Stampfer, Christoph},
      title        = {{D}ry transfer of {CVD} graphene using {M}o{S} 2 -based
                      stamps},
      journal      = {Physica status solidi / Rapid research letters Rapid
                      research letters},
      volume       = {11},
      number       = {7},
      issn         = {1862-6254},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2020-02439},
      pages        = {1700136 -},
      year         = {2017},
      abstract     = {Recently, a contamination‐free dry transfer method for
                      graphene grown by chemical vapor deposition (CVD) has been
                      reported that allows to directly pick‐up graphene from the
                      copper growth substrate using a flake of hexagonal boron
                      nitride (hBN), resulting in ultrahigh charge carrier
                      mobility and low overall doping. Here, we report that not
                      only hBN, but also flakes of molybdenum disulfide (MoS2) can
                      be used to dry transfer graphene. This, on one hand, allows
                      for the fabrication of complex van‐der‐Waals
                      heterostructures using CVD graphene combined with different
                      two‐dimensional materials and, on the other hand, can be a
                      route toward a scalable dry transfer of CVD graphene. The
                      resulting heterostructures are studied using low temperature
                      transport measurements revealing a strong charge carrier
                      density dependence of the carrier mobilities (up to values
                      of 12,000 cm2/(Vs)) and the residual charge carrier
                      density fluctuations near the charge neutrality point when
                      changing the carrier density in the MoS2 by applying a top
                      gate voltage.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000405997200001},
      doi          = {10.1002/pssr.201700136},
      url          = {https://juser.fz-juelich.de/record/877751},
}