Journal Article

FZJ-2020-02439

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dry transfer of CVD graphene using MoS 2 -based stamps

Banszerus, L.RWTH* ; Watanabe, K. ; Taniguchi, T. ; Beschoten, B.FZJ*RWTH* ; Stampfer, C. (Corresponding author)FZJ*RWTH*

2017
Wiley-VCH Weinheim

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Please use a persistent id in citations: http://hdl.handle.net/2128/25201  doi:10.1002/pssr.201700136

Abstract: Recently, a contamination‐free dry transfer method for graphene grown by chemical vapor deposition (CVD) has been reported that allows to directly pick‐up graphene from the copper growth substrate using a flake of hexagonal boron nitride (hBN), resulting in ultrahigh charge carrier mobility and low overall doping. Here, we report that not only hBN, but also flakes of molybdenum disulfide (MoS2) can be used to dry transfer graphene. This, on one hand, allows for the fabrication of complex van‐der‐Waals heterostructures using CVD graphene combined with different two‐dimensional materials and, on the other hand, can be a route toward a scalable dry transfer of CVD graphene. The resulting heterostructures are studied using low temperature transport measurements revealing a strong charge carrier density dependence of the carrier mobilities (up to values of 12,000 cm2/(Vs)) and the residual charge carrier density fluctuations near the charge neutrality point when changing the carrier density in the MoS2 by applying a top gate voltage.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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